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Proceedings Paper

E-Beam Tool Requirements For Nanolithography
Author(s): Ian A. Cruttwell; William V. Colbran; Bernard A. Wallman
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Paper Abstract

Since the beginning of the, use of Electron Beam Lithography there has been a continuous pressure for very fine lithography. This was initially developed for high frequency FET's and these applications remain a powerful user of nanolithography. [1] In addition since those early days, there has emerged the requirements for integrated optics. Recently the use of electron beams to write distributed feedback laser systems has provided greater flexibility in the selection of their operating wavelength. [2] The use of electron beams to write fine holographic patterns of arbitrary complexity has been a growing application. What all these devices have in common, is a high range of complexity coupled with very fine demanding lithography. In addition, there is a strong requirement for ultra fine lithography for physics experiments. These include the use of Josephson Junctions and associated systems for flux entrapment and fundamental physics experiments, as well as the ability to use complex arrays of regular patterns for electro magnetic experiments. [3], [4] In this case the requirements are characterised by a need for very simple fine structures, together with coarser connection to the outside world.

Paper Details

Date Published: 20 June 1985
PDF: 5 pages
Proc. SPIE 0537, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV, (20 June 1985); doi: 10.1117/12.947478
Show Author Affiliations
Ian A. Cruttwell, Cambridge Instruments Limited (England)
William V. Colbran, Cambridge Instruments Limited (United Kingdom)
Bernard A. Wallman, Cambridge Instruments Limited (England)


Published in SPIE Proceedings Vol. 0537:
Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies IV
Phillip D. Blais, Editor(s)

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