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Proceedings Paper

High Speed Semiconductor Lasers For Interconnects
Author(s): Badri N. Gomatam; Alfred P. De Fonzo
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Paper Abstract

We review current techniques in modeling the semiconductor laser through the use of equivalent circuits that predict semiconductor laser performance under high frequency modulation and high speed switching conditions as well as the influence of material parameters and characteristics. Factors governing the intrinsic response of the laser are discussed. We then discuss the influence of packaging and chip parasitics on the modulation response.

Paper Details

Date Published: 8 September 1988
PDF: 7 pages
Proc. SPIE 0947, Interconnection of High Speed and High Frequency Devices and Systems, (8 September 1988); doi: 10.1117/12.947444
Show Author Affiliations
Badri N. Gomatam, University of Massachusetts (United States)
Alfred P. De Fonzo, University of Massachusetts (United States)


Published in SPIE Proceedings Vol. 0947:
Interconnection of High Speed and High Frequency Devices and Systems
Alfred P. DeFonzo, Editor(s)

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