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Proceedings Paper

Bistable Diode Laser Amplifier For High Performance Optical Communication And Optical Computing
Author(s): M. Dagenais
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Paper Abstract

The most energy efficient electronic switching devices typically dissipate between 10 and 30 fJ at room temperature. When operated in a ring oscillator configuration these devices can switch in less than 10 ps. In order to obtain these performance characteristics, it is necessary to operate them in a configuration that minimize the total interconnect length. This is done to reduce the capacitance and the charging time of on-chip transmission line. Recently, for the first time, optical switching devices have demonstrated switching energies per unit gain comparable to the most efficient electronic devices. The optical device that exhibits these properties is a bistable diode laser amplifier. One of the important advantage of optical devices is the fact that their switching energy is to a large extent independent of the interconnect length, in contrast to electronic devices. So, an optical device having a similar switching energy per unit gain to an electronic device is expected to become more energy efficient than an electronic device as the fan-out, or as the interconnect length, increase. An area of electronic where long interconnects are a necessity and where capacitance loading is of major concern, is the area of implementation of global interconnects. Examples where one needs to implement global interconnects include electronic circuits to implement Fourier transforms, convolutions and crossbar switches4. It is the purpose of this paper to propose a scheme to implement a generalized optical crossbar switch. In our scheme, we also propose to use the technique of wavelength division multiplexing and demultiplexing of closely spaced channels to take advantage of the high frequency bandwidth of the light.

Paper Details

Date Published: 8 September 1988
PDF: 7 pages
Proc. SPIE 0947, Interconnection of High Speed and High Frequency Devices and Systems, (8 September 1988); doi: 10.1117/12.947439
Show Author Affiliations
M. Dagenais, University of Maryland (United States)

Published in SPIE Proceedings Vol. 0947:
Interconnection of High Speed and High Frequency Devices and Systems
Alfred P. DeFonzo, Editor(s)

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