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Proceedings Paper

Growth Mode And Initial Stage Schottky Barrier Formation At The In/GaAs Interface: A Photoemission Study
Author(s): Renyu Cao; Ken Miyano; K.Ken. Chin; Ingolf Lindau; William E. Spicer
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Paper Abstract

The In growth on cleaved GaAs(110) surfaces at room temperature (RT) and 80 K low temperature (LT) as well as the initial stage Schottky barrier formation at this interface has been studied using photoelectron spectroscopy. In grows as 3-D islands at RT, but in Stanski-Krastanov mode at LT. The size of the clusters has been estimated through an intensity study. The In core level spectra continuously shifts to high binding energy direction in the transformation from isolated atoms to bulk metal. The Fermi level pinning pattern shows a strong temperature dependence, which challenges current models of Schottky barrier formation at metal/semiconductor interfaces.

Paper Details

Date Published: 9 August 1988
PDF: 8 pages
Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); doi: 10.1117/12.947434
Show Author Affiliations
Renyu Cao, Stanford University (United States)
Ken Miyano, Stanford University (United States)
K.Ken. Chin, Stanford University (United States)
Ingolf Lindau, Stanford University (United States)
William E. Spicer, Stanford University (United States)

Published in SPIE Proceedings Vol. 0946:
Spectroscopic Characterization Techniques for Semiconductor Technology III
Orest J. Glembocki; Fred H. Pollak; Fernando A. Ponce, Editor(s)

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