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Proceedings Paper

Scanning Tunneling Spectroscopy
Author(s): D. K. Biegelsen
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Paper Abstract

Scanning tunneling microscopy (STM) provides a means of directly imaging surface topography with atomic scale resolution. Scanning tunneling spectroscopy (STS) usually refers to the image-wise determination of the tunnel current variation with bias voltage for fixed tunnel gap width. Results can be related to the density of filled and empty surface electronic states. The association of energetic features with spatially localized features is a unique capability. Other variations of STS are inelastic tunneling imaging and barrier spectroscopic imaging. All these techniques are described and representative examples given to provide a survey of STS.

Paper Details

Date Published: 9 August 1988
PDF: 8 pages
Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); doi: 10.1117/12.947433
Show Author Affiliations
D. K. Biegelsen, Xerox Palo Alto Research Center (United States)


Published in SPIE Proceedings Vol. 0946:
Spectroscopic Characterization Techniques for Semiconductor Technology III
Orest J. Glembocki; Fred H. Pollak; Fernando A. Ponce, Editor(s)

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