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Proceedings Paper

Study Of Thin Epitaxial Film Formation By Germanium Segregation In Silicon Oxidation
Author(s): S. M. Prokes; O. J. Glembocki; E. P. Donovan; R. Stahlbush; W. E. Carlos; H. Dietrich; A. Christou
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Paper Abstract

Thin germanium-rich layers have been formed by the implantation of Ge into Si substrates, followed by a wet oxidation process. We have measured the germanium concentration profile of layers formed by this method for samples initially implanted to a dose of 1 x 1017cm-2. Structural, optical, and electronic probes have been used, all of which yield similar results. The results from Ruth-erford backscattering (RBS), Auger spectroscopy (AES), Raman spectroscopy, and electroreflectance (ER) show that the germanium-rich layer is about 300A thick, and contains an average germanium concentration of 65%. The SiGe/Si interface is not sharp but diffuse, with a decreasing germanium concentration. In addition, the data suggest a thin layer of Si13Ge87 near the Si02/SiGe interface.

Paper Details

Date Published: 9 August 1988
PDF: 7 pages
Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); doi: 10.1117/12.947432
Show Author Affiliations
S. M. Prokes, Naval Research Laboratory (United States)
O. J. Glembocki, Naval Research Laboratory (United States)
E. P. Donovan, Naval Research Laboratory (United States)
R. Stahlbush, Naval Research Laboratory (United States)
W. E. Carlos, Naval Research Laboratory (United States)
H. Dietrich, Naval Research Laboratory (United States)
A. Christou, Naval Research Laboratory (United States)


Published in SPIE Proceedings Vol. 0946:
Spectroscopic Characterization Techniques for Semiconductor Technology III
Orest J. Glembocki; Fred H. Pollak; Fernando A. Ponce, Editor(s)

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