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Proceedings Paper

Quantitative Depth Profiling Analysis Of (Al,Ga)As Structures By Secondary Neutral Mass Spectrometry (SNMS)
Author(s): Nicola Kelly; Ulrich Kaiser
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Paper Abstract

Secondary Neutral Mass Spectrometry (SNMS) has been applied to the quantitative compositional analysis as a function of depth of AlxGa1-xAs material systems. The technique described utilizes Ar+ ions from a high frequency, low pressure plasma for sputtering the sample surface. Low primary ion energies (typically 200 eV), coupled with high sample current densities (1-2 mA/cm2) allow rapid, high resolution depth profiling since atomic mixing and "knock-on" effects are minimized. Sputtered neutrals are post-ionized in the plasma by electron bombardment. The well-known matrix effects which limit quantitation in Secondary Ion Mass Spectrometry (SIMS), are negligible in SNMS. The sensitivity factor for Al is found to be independent of sample composition, x.

Paper Details

Date Published: 9 August 1988
PDF: 9 pages
Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); doi: 10.1117/12.947431
Show Author Affiliations
Nicola Kelly, Leybold Vacuum Products (United States)
Ulrich Kaiser, Leybold Vacuum Products (United States)


Published in SPIE Proceedings Vol. 0946:
Spectroscopic Characterization Techniques for Semiconductor Technology III
Orest J. Glembocki; Fred H. Pollak; Fernando A. Ponce, Editor(s)

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