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Proceedings Paper

TEM Characterization of II-VI Compound Semiconductors
Author(s): Herbert F. Schaake
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Paper Abstract

Transmission electron microscopy (TEM) has been extensively used to characterize crystalline defects in II-VI compound semiconductors in the systems Hg-Cd-Te, Hg-Zn-Te and Cd-Zn-Te. These compounds are currently of interest for infrared detector and substrate materials. Several examples of the use of TEM to understand and improve these materials are presented. The examples include the characterization of defects in materials grown by most of the techniques currently in use, the structure of anodic oxides grown on these materials, and defects induced during ion implantation.

Paper Details

Date Published: 9 August 1988
PDF: 9 pages
Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); doi: 10.1117/12.947430
Show Author Affiliations
Herbert F. Schaake, Texas Instruments Incorporated (United States)


Published in SPIE Proceedings Vol. 0946:
Spectroscopic Characterization Techniques for Semiconductor Technology III
Orest J. Glembocki; Fred H. Pollak; Fernando A. Ponce, Editor(s)

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