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Proceedings Paper

Photoluminescence Studies Of InGaAlAs Quaternary Alloys
Author(s): Eric D. Jones; L.Ralph Dawson
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Paper Abstract

Photoluminescence data are used to obtain the concentration and temperature dependence of the bandgap energies of epitaxial layers of quaternary alloy In Ga Al As for Al concentrations less than 0.6. The samples were grown by MBE without an intervening buffer layer. For an In concentration of 0.1, the transition from a direct to an indirect bandgap material occurs at Al concentration of about 0.5. Coefficients of the temperature dependence of the bandgap energy are also presented.

Paper Details

Date Published: 9 August 1988
PDF: 5 pages
Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); doi: 10.1117/12.947428
Show Author Affiliations
Eric D. Jones, Sandia National Laboratories (United States)
L.Ralph Dawson, Sandia National Laboratories (United States)


Published in SPIE Proceedings Vol. 0946:
Spectroscopic Characterization Techniques for Semiconductor Technology III
Orest J. Glembocki; Fred H. Pollak; Fernando A. Ponce, Editor(s)

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