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Proceedings Paper

Strain Distribution Of MBE Grown GexSi1_x/Si Layers by Raman Scattering
Author(s): S. J. Chang; M. A. Kallel; K. L. Wang; R. C. Bowman Jr.; Peter Chow
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Paper Abstract

The strain distribution of GexSi1-x/Si strained layer superlattice (SLS) as a function of the distance from the interface has been studied by Raman Spectroscopy. A small angle bevel was made by angle lapping on a given thick GexSi1-x/Si SLS so that it is possible to probe the structure at different thicknesses. The Raman spectrum as a function of the distance from interface is then obtained. The results indicate that, as we move away from the interface, compression strain in the alloy layers decreases, tensile strain in the Si layers increases and lower concentration of crystalline defects are present as observed from linewidth measurement.

Paper Details

Date Published: 9 August 1988
PDF: 6 pages
Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); doi: 10.1117/12.947426
Show Author Affiliations
S. J. Chang, University of California (United States)
M. A. Kallel, University of California (United States)
K. L. Wang, University of California (United States)
R. C. Bowman Jr., The Aerospace Corporation (United States)
Peter Chow, Perkin Elmer (United States)


Published in SPIE Proceedings Vol. 0946:
Spectroscopic Characterization Techniques for Semiconductor Technology III
Orest J. Glembocki; Fred H. Pollak; Fernando A. Ponce, Editor(s)

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