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Proceedings Paper

Alloy Disorder Effects In Molecular Beam Epitaxically Grown AlxGa1_xAs Examined Via Raman And Rayleigh Scattering And Near Edge Luminescence
Author(s): Pudong Lao; Wade C. Tang; A. Madhukar; P. Chen
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Paper Abstract

Raman scattering, Rayleigh scattering and band edge photoluminescence are employed to examine the behavior of alloy disorder in AlxGa1-xAs alloys grown on GaAs(100) under reflection high energy electron diffraction determined growth conditions in molecular beam epitaxy. Evidence is found for the dependence of the short and long range disorder effects on the growth kinetics attendant to chosen growth conditions and on the Al concentration. At high Al concentration (xAl~0.8) evidence is found for the occurrence of atomic scale GaAs-like and AlAs-like regions. In addition, the "AlAs-like" TO mode is observed in the forbidden back scattering geometry and is likely due to strain and/or disorder related breakdown of the usual selection rules.

Paper Details

Date Published: 9 August 1988
PDF: 5 pages
Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); doi: 10.1117/12.947424
Show Author Affiliations
Pudong Lao, University Of Southern California (United States)
Wade C. Tang, University Of Southern California (United States)
A. Madhukar, University Of Southern California (United States)
P. Chen, University Of Southern California (United States)


Published in SPIE Proceedings Vol. 0946:
Spectroscopic Characterization Techniques for Semiconductor Technology III
Orest J. Glembocki; Fred H. Pollak; Fernando A. Ponce, Editor(s)

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