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Proceedings Paper

Raman Characterization Of Semiconductor Superlattices
Author(s): J. Sapriel
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Paper Abstract

Raman scattering is a useful and non-destructive tool for characterization of semiconductor multilayered structures. This review paper is focused on the determination of the structure and composition as well as the optical, acoustical and acousto-optical properties of superlattices (or multiquantum wells). Most of the experimental results presented here concern the GaAs/AlAs superlattice system and are based on light scattering by folded acoustic modes and quantized optical modes. The Raman investigation of other superlattice systems (GaSb/ AlSb, GeSi/SisxGel-x etc...) as well as the scattering by interface modes are briefly reviewed. In certain application it is necesssary to locally destroy the multiquantum well structure in order to obtain optical and electrical confinements. The intentionally induced disordering can be also analyzed by Raman scattering.

Paper Details

Date Published: 9 August 1988
PDF: 10 pages
Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); doi: 10.1117/12.947422
Show Author Affiliations
J. Sapriel, Centre National d'etudes des Telecommunications (France)

Published in SPIE Proceedings Vol. 0946:
Spectroscopic Characterization Techniques for Semiconductor Technology III
Orest J. Glembocki; Fred H. Pollak; Fernando A. Ponce, Editor(s)

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