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Proceedings Paper

Optical Study Of Interface Effects In TCO/Amorphous Semiconductors Systems
Author(s): F. Demichelis; G. Kaniadakis; E. Tresso; A. Tagliaferro; R. R. Arya
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Paper Abstract

The optical properties of each semiconducting layer in amorphous solar cells were deduced from transmittance and reflectance measurements. Optical gaps, absorbances and photon efficiencies o structures were deduced. The influence on such properties of the different transparent conductive oxides used as windows in solar cells was obtained by comparing the same structures covered by Tin Oxide and Indium Tin Oxide respectively.

Paper Details

Date Published: 9 August 1988
PDF: 7 pages
Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); doi: 10.1117/12.947421
Show Author Affiliations
F. Demichelis, Dipartimento di Fisica del Politecnico di Torino (Italy)
G. Kaniadakis, Dipartimento di Fisica del Politecnico di Torino (Italy)
E. Tresso, Dipartimento di Fisica del Politecnico di Torino (Italy)
A. Tagliaferro, I.E.N. Galileo Ferraris (Italy)
R. R. Arya, Solarex Thin Film Division (United States)


Published in SPIE Proceedings Vol. 0946:
Spectroscopic Characterization Techniques for Semiconductor Technology III
Orest J. Glembocki; Fred H. Pollak; Fernando A. Ponce, Editor(s)

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