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Proceedings Paper

GaAs/AlGaAs Superlattice Characterization By Variable Angle Spectroscopic Ellipsometry
Author(s): Kenneth G. Merkel; Paul G. Snyder; John A. Woollam; Samuel A. Alterovitz
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Paper Abstract

Variable angle of incidence spectroscopic ellipsometry (VASE) was used to determine the thickness, alloy composition, and growth quality of multilayer samples. These samples contained a single quantum well grown on a GaAs/AlGaAs superlattice. The superlattice layers were modeled as a bulk Al GaAs layer of unknown composition and thickness. A data fitting procedure allowed the variation of five layer thicknesses and two alloy compositions in a regression analysis. Extremely good data fits of the ellipsometric parameters * and A were realized in the 1.55 to 3.54 eV spectral range. Computer generations of the ellipsometric parameters were performed, and were compared with experimental results. The e-hh(1), e-lh (1), and e-hh(2) exciton transitions were observed in the VASE data measured at room temperature. VASE has thus provided a nondestructive and highly effective technique for characterizing intricate multilayered structures.

Paper Details

Date Published: 9 August 1988
PDF: 7 pages
Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); doi: 10.1117/12.947418
Show Author Affiliations
Kenneth G. Merkel, University of Nebraska-Lincoln (United States)
Paul G. Snyder, University of Nebraska-Lincoln (United States)
John A. Woollam, University of Nebraska-Lincoln (United States)
Samuel A. Alterovitz, NASA Lewis Research Center (United States)

Published in SPIE Proceedings Vol. 0946:
Spectroscopic Characterization Techniques for Semiconductor Technology III
Orest J. Glembocki; Fred H. Pollak; Fernando A. Ponce, Editor(s)

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