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Proceedings Paper

Optical Measurement Of Built-In And Applied Electric Fields In AlxGa1_xAs/GaAs Heterostructures
Author(s): Paul G. Synder; Kenneth G. Merkel; John A. Woollam
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Paper Abstract

Variable angle spectroscopic ellipsometry (VASE) is used to study the built-in electric fields in AlxGa1-xAs/GaAs heterostructures. VASE data, obtained with no electrical contacts on the sample, contain Franz-Keldysh (FK) lineshapes at the AlGaAs bandgap energy, which are due to the built-in field across the buried AlGaAs layer. Analysis of the lineshapes, using the FK theory together with a multilayer model, yields the approximate field profile in the layer. This, combined with a numerical solution of Poisson's equation, provides the approximate doping concentration. In addition, measurements made on samples with electrical contacts are described.

Paper Details

Date Published: 9 August 1988
PDF: 7 pages
Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); doi: 10.1117/12.947417
Show Author Affiliations
Paul G. Synder, University of Nebraska-Lincoln (United States)
Kenneth G. Merkel, University of Nebraska-Lincoln (United States)
John A. Woollam, University of Nebraska-Lincoln (United States)

Published in SPIE Proceedings Vol. 0946:
Spectroscopic Characterization Techniques for Semiconductor Technology III
Orest J. Glembocki; Fred H. Pollak; Fernando A. Ponce, Editor(s)

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