Share Email Print

Proceedings Paper

Photoreflectance Study of Ion-implanted CdTe
Author(s): P. M. Amirtharaj; R. C. Bowman; R. L. Alt
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We have used the contactless and nondestructive technique of photoreflectance (PR) to study boron-ion implanted {100} CdTe both before and after annealing. The samples studied were implanted using 100 to 400 keV boron ions to a dosage of 1x1016/cm2 and some were annealed in vacuum at 500C for 1 hour. The spectral measurements made at 77K in the vicinity of the direct gap, Eo, indicate three dominant phases with distinctly different line widths that may originate in a nearly crystalline, partially crystalline and heavily damaged regions in the sample. A study of the E1 spectra and the changes in the line shapes in the vicinity of Eo with varying the pump penetration depth from ~2500A using the 6328A He-Ne laser line to <400A using a near-ultra violet.beam yields some insight into the depth distribution and volume fraction of the three phases.

Paper Details

Date Published: 9 August 1988
PDF: 8 pages
Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); doi: 10.1117/12.947413
Show Author Affiliations
P. M. Amirtharaj, U.S. Army Center for Night Vision and Electro-Optics (United States)
R. C. Bowman, The Aerospace Corporation (United States)
R. L. Alt, The Aerospace Corporation (United States)

Published in SPIE Proceedings Vol. 0946:
Spectroscopic Characterization Techniques for Semiconductor Technology III
Orest J. Glembocki; Fred H. Pollak; Fernando A. Ponce, Editor(s)

© SPIE. Terms of Use
Back to Top