Share Email Print
cover

Proceedings Paper

Photoreflectance And Thermoreflectance Of A GaAs/Ga0.82Al0.18As Multiple Quantum Well: Mechanisms of Electromodulation
Author(s): H. Shen; S. H. Pan; Fred H. Pollak; R. N. Sacks
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

From a comparison of the thermoreflectance (first-derivative spectroscopy) and photoreflectance [electromodulation (EM)] spectra at 300K and 77K from a GaAs/Ga0.82A10.18As multiple quantum well structure we have obtained important information about the mechanisms of gm for uncoupled and coupled states. At 300K EM produces a third-derivative lineshape for the latter due to low-field modulation of tunneling states, while for the former a first-derivative is observed, related to modulation of exciton transitions. At 77K both coupled and uncoupled states yield a first-derivative lineshape due to these excitonic effects.

Paper Details

Date Published: 9 August 1988
PDF: 7 pages
Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); doi: 10.1117/12.947410
Show Author Affiliations
H. Shen, Brooklyn College of the City University of New York (United States)
S. H. Pan, Brooklyn College of the City University of New York (United States)
Fred H. Pollak, Brooklyn College of the City University of New York (United States)
R. N. Sacks, United Technologies Research Center (United States)


Published in SPIE Proceedings Vol. 0946:
Spectroscopic Characterization Techniques for Semiconductor Technology III
Orest J. Glembocki; Fred H. Pollak; Fernando A. Ponce, Editor(s)

© SPIE. Terms of Use
Back to Top