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Proceedings Paper

High Peak Power Low Threshold AlGaAs/GaAs Stripe Laser Diodes On Si Substrates By Hybrid MBE/MOCVD Growth
Author(s): J. H. Kim; A. Nouhi; G. Radhakrishnan; J. Katz
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Paper Abstract

We report high peak power low threshold AlGaAs/GaAs double heterostructure stripe geometry laser diodes on Si substrates grown for the first time by hybrid migration-enhanced MBE (MEMBE) and MOCVD. The lasers with 6 pm silicon oxide stripes were tested unmounted under pulsed conditions (i.e., 50 ns pulse width and 10 KHz pulse repetition rate) at room temperature. These lasers show a peak output power as high as 184 mW per facet and a threshold current as low as 150 mA at 300 K for a cavity length of 350 μm. The differential quantum efficiency of 30 % was obtained without mirror facet coating. A threshold current density of 7 kA/cm2 was obtained based on the nominal stripe dimensions without considering current spreading and lateral diffusion; we estimate about 2 kA/cm2 when taking these effects into account. For comparison, the pulsed threshold current density of the broad area DH lasers on GaAs substrates was 1.1 kA/cm2 at room temperature. This would be further reduced for lasers with a quantum well (e.g., GRIN-SCH SQW) active region. These results show the highest output peak power reported so far with a low threshold current for conventional double heterostructure stripe laser diodes grown on Si substrates.

Paper Details

Date Published: 16 August 1988
PDF: 7 pages
Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); doi: 10.1117/12.947405
Show Author Affiliations
J. H. Kim, California Institute of Technology (United States)
A. Nouhi, California Institute of Technology (United States)
G. Radhakrishnan, California Institute of Technology (United States)
J. Katz, California Institute of Technology (United States)


Published in SPIE Proceedings Vol. 0945:
Advanced Processing of Semiconductor Devices II
Harold G. Craighead; Jagdish Narayan, Editor(s)

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