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Proceedings Paper

Defects And Interfaces In Zone Melt Recrystallized Silicon
Author(s): A. R. Srivatsa; J. Narayan; P. M. Zavacky
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Paper Abstract

We have studied defects and interfaces in ZMR silicon using transmission electron microscopy. Both plan view and cross sectional samples were examined and the silicon/oxide interfaces were studied at high magnification. The substrate/oxide interface exhibited a roughness of the order of a monolayer while the oxide/overlayer interface was slightly rougher with a roughness of the order of two to three monolayers. Subboundaries were not observed in the silicon overlayer. Dislocations were the dominant type of defects in the overlayer and dislocation reactions of the type a/2[101] (111) + a/2[011] (111) = a/2[110] (001) were frequently observed. The mechanism of formation of these nodes during the ZMR process is discussed.

Paper Details

Date Published: 16 August 1988
PDF: 5 pages
Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); doi: 10.1117/12.947403
Show Author Affiliations
A. R. Srivatsa, North Carolina State University (United States)
J. Narayan, North Carolina State University (United States)
P. M. Zavacky, Kopin Corporation (United States)


Published in SPIE Proceedings Vol. 0945:
Advanced Processing of Semiconductor Devices II
Harold G. Craighead; Jagdish Narayan, Editor(s)

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