Share Email Print

Proceedings Paper

Effects Of Rapid Thermal Postoxidation Of Rapid Thermally Nitrided Oxides
Author(s): S. Lee; D. K. Shih; D. L. Kwong
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The chemical and electrical characteristics of ~10 nm MOS gate dielectrics formed by the rapid thermal postoxidation of rapid thermally nitrided oxides (RTO/RTN oxides) are described. TEM micrographs show that the interface smoothed by the RTN (1000°C,60s) of SiO2 is roughened by the subsequent heavy RTO (1100°C,60s). The fixed charge and interface state densities of the produced films are strongly dependent on the degree of reoxidation of Si at the interface. MOS capacitor results indicate that, as compared to pure oxide films, the RTO/RTN oxide samples exhibit reduced bulk trap and interface state generation rates under high electrical field stress. Optimized RTN and RTO processes can produce thin dielectrics with enhanced charge to breakdown (QBD strength and flat band voltage (VFB) stability. This multiple rapid thermal processing (RTP) procedure is found to be compatible with MOSFET fabrication technology and to reduce weak spots in thermal oxides. The electrical characteristics of n-channel transistors fabricated with RTO/RTN dielectrics are comparable to those of transistors fabricated with pure oxides.

Paper Details

Date Published: 16 August 1988
PDF: 6 pages
Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); doi: 10.1117/12.947401
Show Author Affiliations
S. Lee, NCR Corporation (United States)
D. K. Shih, The University of Texas at Austin (United States)
D. L. Kwong, The University of Texas at Austin (United States)

Published in SPIE Proceedings Vol. 0945:
Advanced Processing of Semiconductor Devices II
Harold G. Craighead; Jagdish Narayan, Editor(s)

© SPIE. Terms of Use
Back to Top