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Proceedings Paper

Langmuir-Blodgett Deposited Gates For InP-InGaAs Field Effect Transistors
Author(s): Winston K. Chan; Herbert M. Cox; Joseph H. Abeles; Stephen P. Kelty
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Paper Abstract

We report on the novel application of Langmuir-Blodgett film deposition of cadmium di-stearate to form a high barrier height Schottky barrier on n-In0.53Ga0.47As. The method is simple and can be applied to integrated optoelectronics where conflicting device requirements impose astringent constraints on the material and processing technology. Using this technique to form the gate electrode, we fabricated a 1μm gate length inverted InP-InGaAs modulation doped field effect transistor (MODFET) with an extrinsic transconductance of 170 mS/mm and a current gain cut-off frequency fT of 19 GHz.

Paper Details

Date Published: 16 August 1988
PDF: 8 pages
Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); doi: 10.1117/12.947399
Show Author Affiliations
Winston K. Chan, Bell Communications Research (United States)
Herbert M. Cox, Bell Communications Research (United States)
Joseph H. Abeles, Bell Communications Research (United States)
Stephen P. Kelty, Bell Communications Research (United States)

Published in SPIE Proceedings Vol. 0945:
Advanced Processing of Semiconductor Devices II
Harold G. Craighead; Jagdish Narayan, Editor(s)

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