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Proceedings Paper

Reactive Ion Etching Of A Multicomponent Glass Substrate
Author(s): Yue Kuo; J. R. Crowe
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Paper Abstract

A five-component glass has been reactive ion etched with CF4- 02 plasma over a range of pressure, power and gas composition. There are two kinds of components in glass: those chemically etchable and those chemically non-etchable. For the former both chemical reaction and physical bombardment contribute to the etch. For the latter physical bombardment dominates the etch. A feeding stream concentration change was used to illustrate chemical reaction effects. The cathode self-bias voltage was used to evaluate the bombardment mechanism. The addition of argon into the plasma not only increased the glass etch rate but also smoothed the surface topography. SEM and Auger results proved the existence of differential etching mechanisms for glass components.

Paper Details

Date Published: 16 August 1988
PDF: 8 pages
Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); doi: 10.1117/12.947397
Show Author Affiliations
Yue Kuo, IBM T. J. Watson Research Center (United States)
J. R. Crowe, IBM T. J. Watson Research Center (United States)


Published in SPIE Proceedings Vol. 0945:
Advanced Processing of Semiconductor Devices II
Harold G. Craighead; Jagdish Narayan, Editor(s)

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