Share Email Print

Proceedings Paper

Photochemical Vapor Deposition Of Gallium Arsenide
Author(s): D. P. Norton; P. K. Ajmera
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Photochemical vapor deposition (PCVD) of GaAs on fused silica, silicon and GaAs substrates is reported here. A 1000 watt Hg-Xe arc lamp is utilized as the light source with arsine and triethylgallium serving as the reactants. Epitaxial film growth is shown to occur for deposition on both GaAs and silicon substrates. These thin films are characterized using Auger electron spectroscopy, energy dispersive spectrometry, scanning electron microscopy and x-ray diffraction. The results of this study demonstrate the effectiveness in utilizing both photolysis and pyrolysis to achieve deposition.

Paper Details

Date Published: 16 August 1988
PDF: 7 pages
Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); doi: 10.1117/12.947391
Show Author Affiliations
D. P. Norton, Louisiana State University (United States)
P. K. Ajmera, Louisiana State University (United States)

Published in SPIE Proceedings Vol. 0945:
Advanced Processing of Semiconductor Devices II
Harold G. Craighead; Jagdish Narayan, Editor(s)

© SPIE. Terms of Use
Back to Top