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Proceedings Paper

Comparison Of Defects In GaAs Epilayers Grown On Si by MBE and OMCVD: As-Grown And After Rapid Thermal Annealing (RTA)
Author(s): S. Sharan; J. Narayan; J. W. Lee; J. C. C. Fan
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Paper Abstract

GaAs layers grown on silicon by molecular beam epitaxy (MBE) and organometallic chemical vapor deposition (OMCVD) have been characterized using transmission electron microscopy (cross-section and plan view) and high-resolution electron microscopy. The nature of defects in the GaAs layers has been analyzed as a function of growth technique. The type, density and distribution of dislocations was virtually the same in both samples, however the MBE sample also had a high density of planar defects (twins and microtwins). The effect of rapid thermal annealing (RTA) on the defect density and nature has also been studied for both growth techniques. RTA leads to a decrease in the dislocation density in the near surface region and eliminates virtually all the twins and microtwins in the MBE sample.

Paper Details

Date Published: 16 August 1988
PDF: 9 pages
Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); doi: 10.1117/12.947387
Show Author Affiliations
S. Sharan, North Carolina State University (United States)
J. Narayan, North Carolina State University (United States)
J. W. Lee, Kopin Corp. (United States)
J. C. C. Fan, Kopin Corp. (United States)

Published in SPIE Proceedings Vol. 0945:
Advanced Processing of Semiconductor Devices II
Harold G. Craighead; Jagdish Narayan, Editor(s)

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