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Proceedings Paper

Studies Of Ion Beam Enhanced Mixing Of AlGaAs Superlattices
Author(s): P. Mei; S. A. Schwarz; T. Venkatesan; N. G. Stoffel; J. P. Harbison
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Paper Abstract

The species dependence of ion induced superlattice mixing has been examined in AlAs-GaAs superlattice samples grown by molecular beam epitaxy. The interdiffusion of the superlattices induced by ion implantation with comparable ranges, doses and subsequent thermal anneals were measured with secondary ion mass spectrometry. The effects of elements of comparable mass (Ga, As, and Ge) and comparable valence (Si and Ge, Be and Zn) were compared. The experimental results show that Ga and As implantation cause only collision-induced mixing, while Ge implantation results in collision-induced mixing with additional impurity-induced mixing beyond the implant range. In comparison with Ge, Si induced mixing is similar in nature though there is a significant difference in the depth and extent of the mixing. The extent of the mixing is found to depend on the local Ge or Si concentration. The mixing effect of Be and Zn is predominately an impurity effect.

Paper Details

Date Published: 16 August 1988
PDF: 10 pages
Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); doi: 10.1117/12.947386
Show Author Affiliations
P. Mei, Rutgers University (United States)
S. A. Schwarz, Bellcore Red Bank (United States)
T. Venkatesan, Bellcore Red Bank (United States)
N. G. Stoffel, Bellcore Red Bank (United States)
J. P. Harbison, Bellcore Red Bank (United States)

Published in SPIE Proceedings Vol. 0945:
Advanced Processing of Semiconductor Devices II
Harold G. Craighead; Jagdish Narayan, Editor(s)

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