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Proceedings Paper

Low Thermal Expansion Polyimide Buried Ridge-Waveguide AlGaAs Laser Diode
Author(s): Fumihiko Sato; Hiroshi Imamoto; Koichi Imanaka; Mikihiko Shimura
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Paper Abstract

A novel wafer processing technology to fabricate ridge-waveguide laser diode has been developed, using a low thermal expansion polyimide and an etch-back process. A low threshold current of 15mA, a high To value of 145K, and a maximum power output higher than 30mW/facet under cw operation have been achieved in a GRIN-SCH single quantum well PBR(Polyimide Buried Ridge) laser emitting at 780nm. High temperature oscillation at 1900C and To of 165K have been also obtained in a GRIN-SCH multiple quantum well PBR laser. A planar configuration in the present PBR laser is suitable for opto-electronic integration.

Paper Details

Date Published: 16 August 1988
PDF: 4 pages
Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); doi: 10.1117/12.947385
Show Author Affiliations
Fumihiko Sato, OMRON Tateisi Electronics Co. (Japan)
Hiroshi Imamoto, OMRON Tateisi Electronics Co. (Japan)
Koichi Imanaka, OMRON Tateisi Electronics Co. (Japan)
Mikihiko Shimura, OMRON Tateisi Electronics Co. (Japan)


Published in SPIE Proceedings Vol. 0945:
Advanced Processing of Semiconductor Devices II
Harold G. Craighead; Jagdish Narayan, Editor(s)

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