Share Email Print
cover

Proceedings Paper

Reactive Ion Etching Of Laser Structures
Author(s): G. Allen Vawter
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In recent years interest in dry-etch processing of laser struc-tures has grown dramatically. Reactive-ion-etching (RIE) has developed from a high resolution pattern transfer technique for silicon in-tegrated circuit processing into a successful method for fabricating the smooth, vertical facets required by double heterostructure (DH) lasers. However, in addition to RIE several other new plasma processes have been developed and applied to the developement of dry etched laser structures. This paper reviews the motivations behind this work, provides some examples of recent developements in the field of dry-etching as applied to DH laser structures and attempts to point out some of the problems associated with dry etching of optoelectronic devices.

Paper Details

Date Published: 16 August 1988
PDF: 7 pages
Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); doi: 10.1117/12.947383
Show Author Affiliations
G. Allen Vawter, Sandia National Laboratories (United States)


Published in SPIE Proceedings Vol. 0945:
Advanced Processing of Semiconductor Devices II
Harold G. Craighead; Jagdish Narayan, Editor(s)

© SPIE. Terms of Use
Back to Top