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Proceedings Paper

Laser-Assisted Molecular Beam Epitaxical Growth Of GaAs On Si (100)
Author(s): F. J. Grunthaner; A. Madhukar; J. K. Liu; P. D. Lao; W. C. Tang; S. Guha
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Paper Abstract

We have grown GaAs on Si (100) substrates misoriented 4° from the [110] direction using a KrF pulsed excimer laser-assisted Molecular Beam Epitaxy. In this work, we report the systematic study of 2000 A GaAs films grown on Si using a two step growth sequence. Raman scattering, Rayleigh scattering, near band edge photoluminescence, cross-sectional TEM microscopy, in situ RHEED, and optical surface roughness profiles are used to characterize the differences between laser irradiated and non-irradiated areas of the samples. We find a reduction of defects, an enhancement of photoluminescence intensity, and no evidence for laser-induced melting for power levels of up to 25 MW/cm2. Photoluminescence linewidths at 4.5K are comparable to widths observed for 1 micrometer thick GaAs films grown on Si.

Paper Details

Date Published: 15 August 1988
PDF: 9 pages
Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947382
Show Author Affiliations
F. J. Grunthaner, California Institute of Technology (United States)
A. Madhukar, University of Southern California (United States)
J. K. Liu, California Institute of Technology (United States)
P. D. Lao, University of Southern California (United States)
W. C. Tang, University of Southern California (United States)
S. Guha, University of Southern California (United States)


Published in SPIE Proceedings Vol. 0944:
Growth of Compound Semiconductor Structures II
Anupam Madhukar, Editor(s)

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