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Proceedings Paper

Effects Of Low-Energy Ion/Surface Interactions On Nucleation And Growth Kineticsiduring Film Growth From The Vapor Phase
Author(s): J. E. Greene
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Paper Abstract

Low-energy (< 200 eV) ion irradiation during crystal growth from the vapor phase plays an important and sometimes dominant role in controlling the growth kinetics and physical properties of films deposited by glow discharge and ion beam sputter deposition, molecular beam epitaxy using accelerated dopants, and plasma-assisted chemical vapor deposition. Ion/surface interaction effects, including trapping, preferential sputtering collisional mixing, and surface segregation are used to interpret and model experimental results concerning the effects of low-energy particle bombardment on nucleation kinetics, growth kinetics, enhanced diffusion at interfaces, elemental incorporation probabilities, and dopant depth distributions. Of particular interest are the results of recent experiments designed to: (1) determine elemental incorporation probabilities and depth profiles of accelerated dopants in MBE Si and GaAs as a function of accelerated energy E and growth temperature Ts, (2) investigate nucleation and growth kinetics of In overlayers using primary-ion deposition as a function of EInand Ts on clean Si(100)2x1 surfaces, (3) use molecular dynamics and Monte Carlo simulations to investigate microstructure evolution, (4) investigate the role of low-energy ion irradiation in reducing dislocation densities in epitaxial TiN(100) layers, and (5) use low-energy ion-mixing to grow unique single-crystal metastable semiconducting alloys.

Paper Details

Date Published: 15 August 1988
PDF: 1 pages
Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947381
Show Author Affiliations
J. E. Greene, Univ. of Illinois (United States)

Published in SPIE Proceedings Vol. 0944:
Growth of Compound Semiconductor Structures II
Anupam Madhukar, Editor(s)

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