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Proceedings Paper

Electron-Beam Exposure Heteroepitaxial Growth Of GaAs/CaF2/Si Structures
Author(s): Seijiro Furukawa; Hiroshi Ishiwara; Tanemasa Asano; Hee Chul Lee
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Paper Abstract

In near future, heteroepitaxy of semiconductor on the insulator will be very important in the field of OEIC, 3D IC, high speed IC and so on. This paper presents a novel hetero-epitaxial growth of GaAs on CaF2 /Si substrate for such applications. First of all, a brief explanation about the features of group IIa fluorides(CaF2, SrF2, BaF2 and their mixed crystals) is made. Then, the experimental procedure and the effectiveness of the electron-beam exposure epitaxy(EBE-epitaxy) are described. It is shown that the EBE-epitaxy is potentially capable of growing a GaAs film having a smooth surface, good crystallinity and single crystallographic orientation. The discussion is also made to clarify the mechanism of the EBE-epitaxy.

Paper Details

Date Published: 15 August 1988
PDF: 7 pages
Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947379
Show Author Affiliations
Seijiro Furukawa, Tokyo Institute of Technology (Japan)
Hiroshi Ishiwara, Tokyo Institute of Technology (Japan)
Tanemasa Asano, Tokyo Institute of Technology (Japan)
Hee Chul Lee, Tokyo Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 0944:
Growth of Compound Semiconductor Structures II
Anupam Madhukar, Editor(s)

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