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Proceedings Paper

Growth And Characteristics Of Organic-On-Inorganic Semiconductor Heterostructures
Author(s): F. F. So; S. R. Forrest
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Paper Abstract

Recently, several crystalline organic semiconductors have been found to form rectifying heterojunctions when deposited onto inorganic semiconductor substrates. In this paper, we discuss the growth and characterization of these organic-on-inorganic (0I) heterostructures. Both the purification of organic materials, and the fabrication procedures for OI heterostructures are described in detail. The electrical properties, as well as the microstructure of the organic material are found to be very sensitive to the deposition conditions. The valence band discontinuity at the OI heterojunction is measured for the first time, using both forward current-voltage characteristics and internal photo-emission. The interface state densities have been studied for several different organic semiconductors deposited on p-Si substrates. A model is proposed to account for the observed results.

Paper Details

Date Published: 15 August 1988
PDF: 6 pages
Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947376
Show Author Affiliations
F. F. So, University of Southern California (United States)
S. R. Forrest, University of Southern California (United States)

Published in SPIE Proceedings Vol. 0944:
Growth of Compound Semiconductor Structures II
Anupam Madhukar, Editor(s)

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