Share Email Print

Proceedings Paper

Growth of ZnSe/GaAs Structures By Close Spaced Vapor Transport
Author(s): Gerard Perrier; Robert Philippe; Jean-Pol Dodelet
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The Close Spaced Vapor Transport has been applied to the growth of ZnSe thin layers on (100) GaAs substrates. After a presentation of the technique involved in the growth, scanning electron microscopy and X-rays diffractometry studies show that the deposit is mainly cubic ZnSe with a slight contribution of hexagonal ZnSe. The influence of the deposition conditions on the growth rate is reported, and the two existing models are presented.

Paper Details

Date Published: 15 August 1988
PDF: 7 pages
Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947373
Show Author Affiliations
Gerard Perrier, GREP Mesures Physiques (France)
Robert Philippe, GREP Mesures Physiques (France)
Jean-Pol Dodelet, INRS-Energie (Canada)

Published in SPIE Proceedings Vol. 0944:
Growth of Compound Semiconductor Structures II
Anupam Madhukar, Editor(s)

© SPIE. Terms of Use
Back to Top