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Proceedings Paper

Growth of ZnSe/GaAs Structures By Close Spaced Vapor Transport
Author(s): Gerard Perrier; Robert Philippe; Jean-Pol Dodelet
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Paper Abstract

The Close Spaced Vapor Transport has been applied to the growth of ZnSe thin layers on (100) GaAs substrates. After a presentation of the technique involved in the growth, scanning electron microscopy and X-rays diffractometry studies show that the deposit is mainly cubic ZnSe with a slight contribution of hexagonal ZnSe. The influence of the deposition conditions on the growth rate is reported, and the two existing models are presented.

Paper Details

Date Published: 15 August 1988
PDF: 7 pages
Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947373
Show Author Affiliations
Gerard Perrier, GREP Mesures Physiques (France)
Robert Philippe, GREP Mesures Physiques (France)
Jean-Pol Dodelet, INRS-Energie (Canada)


Published in SPIE Proceedings Vol. 0944:
Growth of Compound Semiconductor Structures II
Anupam Madhukar, Editor(s)

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