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Proceedings Paper

Effects Of Strains On The Polar/Non-Polar Heteroepitaxy
Author(s): Hilmi Unlu; Hadis Morkoc
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Paper Abstract

Recent advances made in the heteroepitaxial growth led to a great deal of activity in the growth of GaAs based high speed devices in Si substrates. This is primarily caused by the possibility of utilization of the superior electrical and optical properties of GaAs and other III-V compounds and highly developed Si technology on Si substrates. However, there are still unresolved fundamental issues related to the material properties of polar/non-polar heteroepitaxy. Such issues are the effects of substrate tilting, in-situ and ex-situ annealing on the films (e.g. 3-D and 2-D nucleation, critical film thickness, etc.). A rigorous method is used to derive the equation of state of an interface formed between two bulk phases (metal-semiconductor, semiconductor-semiconductor) at a given temperature. The method is based on calculation of the effect of stresses and strains on properties of multilayered films grown on a thiCk substrate (flat and tilted). In the calculations, the total energy is minimized that gives explicit expressions for the interface properties (e.g. radius of the 3-D islands, critical film thickness, band offsets, Schottky barriers, etc.).

Paper Details

Date Published: 15 August 1988
PDF: 1 pages
Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947369
Show Author Affiliations
Hilmi Unlu, Univ. of Illinois at Urbana-Champaign (United States)
Hadis Morkoc, Univ. of Illinois at Urbana-Champaign (United States)


Published in SPIE Proceedings Vol. 0944:
Growth of Compound Semiconductor Structures II
Anupam Madhukar, Editor(s)

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