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Proceedings Paper

Lateral Patterning Of Semiconductor Superlattice Heterostructures By Epitaxial Growth On Nonplanar Substrates
Author(s): E. Kapon; C. P. Yun; D. M. Hwang; M. C. Tamargo; J. P. Harbison; R. Bhat
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Paper Abstract

A new technique for lateral patterning of quantum well and superlattice semiconductor heterostructures has been investigated. The technique utilizes the lateral thickness variations exhibited by thin epitaxial films grown on nonplanar substrates, and the strong dependence of the confinement energy on the quantum well thickness in order to achieve lateral patterning of the effective bandgap and related physical properties. The growth of GaAs/A1GaAs quantum well heterostructures on nonplanar GaAs substrates using molecular beam epitaxy and organometallic chemical vapor deposition was characterized by transmission electron microscopy. Conditions for obtaining substantial lateral variations in the quantum well thickness have been identified. Novel semiconductor lasers whose performance relies on this patterning technique have been demonstrated. These devices exhibit new and improved features, including very low threshold currents (as low as 1.8 mA for uncoated devices at room temperature), and quantum-wire-like active regions.

Paper Details

Date Published: 15 August 1988
PDF: 14 pages
Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947367
Show Author Affiliations
E. Kapon, Navesink Research and Engineering Center (United States)
C. P. Yun, Navesink Research and Engineering Center (United States)
D. M. Hwang, Navesink Research and Engineering Center (United States)
M. C. Tamargo, Navesink Research and Engineering Center (United States)
J. P. Harbison, Navesink Research and Engineering Center (United States)
R. Bhat, Navesink Research and Engineering Center (United States)


Published in SPIE Proceedings Vol. 0944:
Growth of Compound Semiconductor Structures II
Anupam Madhukar, Editor(s)

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