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Proceedings Paper

Electron Beam Source Molecular Beam Epitaxy Of AlxGa1-xAs Graded Band Gap Device Structures
Author(s): R. J. Malik; A. F. J. Levi; B. F. Levine; R. C. Miller; D. V. Lang; L. C. Hopkins; R. W. Ryan
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Paper Abstract

A new method has been developed for the growth of graded band-gap AlxGa1-xAs alloys by molecular beam epitaxy which is based upon electron beam evaporation of the Group III elements. The metal evaporation rates are measured real-time and feedback controlled using beam flux sensors. The system is computer controlled which allows precise programming of the Ga and Al evaporation rates. The large dynamic response of the metal sources enables for the first time the synthesis of variable band-gap AlxGa1-xAs with arbitrary composition profiles. This new technique has been demonstrated in the growth of unipolar hot electron transistors, graded base bipolar transistors, and M-shaped barrier superlattices.

Paper Details

Date Published: 15 August 1988
PDF: 8 pages
Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947365
Show Author Affiliations
R. J. Malik, AT&T Bell Laboratories (United States)
A. F. J. Levi, AT&T Bell Laboratories (United States)
B. F. Levine, AT&T Bell Laboratories (United States)
R. C. Miller, AT&T Bell Laboratories (United States)
D. V. Lang, AT&T Bell Laboratories (United States)
L. C. Hopkins, AT&T Bell Laboratories (United States)
R. W. Ryan, AT&T Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 0944:
Growth of Compound Semiconductor Structures II
Anupam Madhukar, Editor(s)

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