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Proceedings Paper

The Influence Of Surface Structure On Diamond-Lattice Epitaxial Growth From The Vapor Phase
Author(s): A. Rockett
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Paper Abstract

The results of a Monte Carlo simulation of crystal growth on the (001) face of diamond-structure semiconductors from the vapor phase are presented. The model shows that growth occurs by adatom clustering, cluster growth, and coalescence. The clusters are anisotropic on specular surfaces due to the influence of the symmetry of the surface reconstruction on diffusion. Anisotropic adatom motion is also shown to give rise to convolution of alternate step edges on terraced surfaces. The reconstruction is predicted to consist of large (2x1) domains on flat surfaces but small domains during growth at partial monolayer coverages. A short-range diffusion event is proposed to permit domain growth and reconstruction dimer alignment. Reconstruction domain formation and growth is predicted to produce oscillations in the half-order spots of reflection high-energy electron diffraction patterns.

Paper Details

Date Published: 15 August 1988
PDF: 9 pages
Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947363
Show Author Affiliations
A. Rockett, University of Illinois (United States)


Published in SPIE Proceedings Vol. 0944:
Growth of Compound Semiconductor Structures II
Anupam Madhukar, Editor(s)

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