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Proceedings Paper

Molecular Mechanics And Monte Carlo Simulations, A Tool To Analyse Defects Formation In Heteroepitaxial Growth
Author(s): D. Esteve; M. Djafari - Rouhani; V. V. Pham; A. Amrani; J. J. Simonne
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Paper Abstract

Molecular Mechanics and Monte Carlo Methods have been applied to the modelling of a heteroepitaxy of CdTe on GaAs presenting a lattice mismatch of 14.7%. The growth of one monolayer has been simulated. The model is restricted to the analysis of defect creation at points of high strain. Creation of stable and unstable defects have been observed from the beginning of the growth in the case of a "soft" substrate.

Paper Details

Date Published: 15 August 1988
PDF: 5 pages
Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947357
Show Author Affiliations
D. Esteve, Laboratoire d'Automatique et d'Analyse des Systemes du C.N.R.S. (France)
M. Djafari - Rouhani, Laboratoire de Physique des Solides, Universite Paul Sabatier (France)
V. V. Pham, Laboratoire d'Automatique et d'Analyse des Systemes du C.N.R.S. (France)
A. Amrani, Laboratoire d'Automatique et d'Analyse des Systemes du C.N.R.S. (France)
J. J. Simonne, Laboratoire d'Automatiaue et d'Analvse des Svstemes du C.N.R.S. (France)


Published in SPIE Proceedings Vol. 0944:
Growth of Compound Semiconductor Structures II
Anupam Madhukar, Editor(s)

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