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Proceedings Paper

A New Model For Excess Ga Interdiffusion Process In GaAs/CdTe Heteroepitaxies
Author(s): D. Esteve; M. Djafari-Rouhani; V. V. Pham; A. Bennis; J. J. Simonne
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Paper Abstract

The presence of a flat distribution of Gallium in a heteroepitaxial CdTe layer processed on GaAs, is originating from the disturbance of the upper layers of GaAs, due to the high lattice mismatch between CdTe and GaAs. A first order model, which considers the solid-state diffusion and the segregation effects at the outer surface of CdTe as the relevant mechanisms taking place during the process, provides this fairly constant Ga distribution through CdTe, and a step increase at the surface. The magnitude of the Ga density appears as a function of the growth rate and the process temperature. A more elaborated model would account also for the stress relaxation effects in the epilayer, allowing the diffusion constant to vary along CdTe.

Paper Details

Date Published: 15 August 1988
PDF: 4 pages
Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947352
Show Author Affiliations
D. Esteve, Laboratoire d'Automatique et d'Analyse des Systemes du C.N.R.S. (France)
M. Djafari-Rouhani, Laboratoire de Physique des Solides - Universite Paul Sabatier (France)
V. V. Pham, Laboratoire d'Automatique et d'Analyse des Systemes du C.N.R.S. (France)
A. Bennis, Laboratoire d'Automatique et d'Analyse des Systemes du C.N.R.S. (France)
J. J. Simonne, Laboratoire d'Automatique et d'Analyse des Systemes du C.N.R.S. (France)


Published in SPIE Proceedings Vol. 0944:
Growth of Compound Semiconductor Structures II
Anupam Madhukar, Editor(s)

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