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Proceedings Paper

In-Situ RHEED Studies To Understand The Dislocation Formation Process In Growth Of InGaAs on GaAs
Author(s): Paul R. Berger; Kevin H. Chang; Pallab Bhattacharya; Jasprit Singh; K. K. Bajaj
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Paper Abstract

A detailed study of reflection high energy electron diffraction (RHEED) during growth of InxGai_xAs (0 < x 5_0.5) on GaAs was carried out. We focussed on the initial stages of growth where the growth is expected to be under coherent strain. RHEED studies provide us information on the growth front which is quite different from what is found in the lattice matched systems. In lattice matched systems, as the growth temperature is increased, the growth front becomes increasingly smooth (below congruent temperature) due to the enhanced surface kinetics. However, in the presence of strain we find that increased substrate temperature produces a growth front which is 3-dimensional in nature. This effect is explained by the reasoning that the equilibrium surface for the lattice matched systems are atomically smooth and that for a strained surface can be 3-dimensional depending upon surface strain.

Paper Details

Date Published: 15 August 1988
PDF: 6 pages
Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947345
Show Author Affiliations
Paul R. Berger, University of Michigan (United States)
Kevin H. Chang, University of Michigan (United States)
Pallab Bhattacharya, University of Michigan (United States)
Jasprit Singh, University of Michigan (United States)
K. K. Bajaj, Wright Patterson Air Force Base (United States)


Published in SPIE Proceedings Vol. 0944:
Growth of Compound Semiconductor Structures II
Anupam Madhukar, Editor(s)

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