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Proceedings Paper

Selective LPE Growth Kinetics Of GaAs On MBE-Grown GaAs On Si
Author(s): Shiro Sakai; S. S. Chang; R. J. Matyi; H. Shichijo
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Paper Abstract

Liquid Phase Epitaxy (LPE) has been successfully employed to grow GaAs selectively on GaAs-coated Si which was previously prepared by Molecular Beam Epitaxy (MBE). A defect density reduction of more than two orders of magnitude compared to that in MBE layer was obtained. The growth was found to depend strongly on the mask pattern, and a marked difference between the growth on GaAs-coated Si and on pure GaAs substrates was observed. The growth may be explained in terms of the transport of the growing species from bulk of the melt to the substrate surface and the succeeding incorporation into the solid. The experimental results suggest that the transport process plays major roles in the growth on GaAs/Si substrates, while the surface reaction also contributes to the growth rate on GaAs substrate.

Paper Details

Date Published: 15 August 1988
PDF: 4 pages
Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947342
Show Author Affiliations
Shiro Sakai, University of Florida (United States)
S. S. Chang, University of Florida (United States)
R. J. Matyi, Texas Instruments, Inc. (United States)
H. Shichijo, Texas Instruments, Inc. (United States)

Published in SPIE Proceedings Vol. 0944:
Growth of Compound Semiconductor Structures II
Anupam Madhukar, Editor(s)

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