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Proceedings Paper

Heteroepitaxial Growth Of CdTe On GaAs (100) : RHEED and XPS Study Of The Te Precursor Surface
Author(s): S. Tatarenko.; K. Saminadayar; J. Cibert; Y. Gobil; G. Cohen-Solal; F. Bailly
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Paper Abstract

MBE conditions to obtain three Te-precursor surfaces for CdTe growth on (100) GaAs substrate and their detailed XPS studies are reported : one GaAs (6x1)100-Te reconstructed surface leading to (100) growth and two reconstructed surfaces, a (6x1)111 and a so-called (I3x3), both inducing a (111) growth. These surfaces have been characterized by the relative concentrations of three Te-adsorbed states TeAS, TeGa and TeTe which are defined by their XPS lines at 573.1, 572.5 and 572.2 eV and assigned to Te bound to As, Te bound to Ga and Te-bridges respectively. Such assignments serve as elements to discuss on a model for the heteroepitaxial growth of CdTe on a GaAs (100) substrate.

Paper Details

Date Published: 15 August 1988
PDF: 4 pages
Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947339
Show Author Affiliations
S. Tatarenko., Universite Joseph Fourier (France)
K. Saminadayar, Centre d'Etudes Nucleaires (France)
J. Cibert, Universite Joseph Fourier (France)
Y. Gobil, Universite Joseph Fourier (France)
G. Cohen-Solal, Laboratoire de Physique des Solides (France)
F. Bailly, Laboratoire de Physique des Solides (France)

Published in SPIE Proceedings Vol. 0944:
Growth of Compound Semiconductor Structures II
Anupam Madhukar, Editor(s)

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