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Proceedings Paper

Numerical And Analytical Theory Of The Time Response Of A Simple Multiquantum Well Avalanche Photodiode
Author(s): K. F. Brennan; Y. Wang; M. C. Teich; B. E. A. Saleh; T. Khoorsandi
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Paper Abstract

Numerical and analytical calculations for the time course of a simple GaAs/AlGaAs multi-quantum well avalanche photodiode are presented. The numerical calculations are based on an ensemble Monte Carlo calculation. The numerical results are obtained by an iterative method in which the parent electrons, those generated from photon absorption, are first simulated yielding the daughter electron and hole distributions. The daughter hole distribution is then simulated based on the time and spatial location of each particle's birth obtained from the previous simulation. The analytical formulation is based on the model of a marked filtered Bernoulli branching process. The analytical results are obtained from a generalized version of previously derived equations for the staircase avalanche photodiode. Both analytical and numerical results are presented for single-carrier initiated, single-carrier multiplication (SCI-SCM) devices. A comparison between the two calculations is addressed. Only simulation results are presented for single-carrier initiated, double-carrier multi-plication (SCI-DCM) devices.

Paper Details

Date Published: 18 August 1988
PDF: 8 pages
Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); doi: 10.1117/12.947320
Show Author Affiliations
K. F. Brennan, Georgia Institute of Technology (United States)
Y. Wang, Georgia Institute of Technology (United States)
M. C. Teich, University of Wisconsin (United States)
B. E. A. Saleh, University of Wisconsin (United States)
T. Khoorsandi, Columbia University (United States)


Published in SPIE Proceedings Vol. 0943:
Quantum Well and Superlattice Physics II
Federico Capasso; Gottfried H. Doehler; Joel N. Schulman, Editor(s)

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