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Proceedings Paper

Nonlinear Optical And Electro-Optical Properties Of Strained-Layer Superlattices Grown Along The [111] Orientation
Author(s): C. Mailhiot; D. L. Smith
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Paper Abstract

Electric polarization fields can be generated by lattice-mismatch induced strain in strained-layer superlattices grown from piezoelectric constituent materials such as III-V semiconductors. The orientation of the polarization fields depends on the superlattice growth axis. For the most commonly studied case of a [100] growth axis, no piezoelectric fields are generated in superlattices made from zincblende-structure constituents. However, for any other growth orientation, these piezoelectric fields do occur. The [111] growth axis presents a particularly interesting case. For this orientation, the polarization fields are parallel to the growth axis. They have opposite polarity in the two constituent materials and can generate large (greater than 105 V/cm) internal electrical fields which also have opposite polarity in the two constituent materials. These internal electric fields strongly modify the electronic structure and optical properties of the superlattice. For example. they change electronic energy levels and wavefunctions and therefore optical transition energies and oscillator strengths. We consider cases where the internal fields are modulated by photoabsorption (because the photogenerated carriers screen the fields) and by an externally applied electric field. Large nonlinear optical and electro-optical coefficients occur in [111] growth-axis strained-layer superlattices because of the internal piezoelectric fields.

Paper Details

Date Published: 18 August 1988
PDF: 8 pages
Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); doi: 10.1117/12.947317
Show Author Affiliations
C. Mailhiot, Xerox Webster Research Center (United States)
D. L. Smith, Los Alamos National Laboratories (United States)

Published in SPIE Proceedings Vol. 0943:
Quantum Well and Superlattice Physics II
Federico Capasso; Gottfried H. Doehler; Joel N. Schulman, Editor(s)

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