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Proceedings Paper

Ordering-Induced Optical Transitions And Hole-Reversal In Si/Ge Short-Period (001) Superlattices
Author(s): M. A. Gell
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Paper Abstract

Pearsall et al [Phys Rev Lett 58, 729 (1987)] have recently presented electroreflectance data on short-period Si/Ge (001) superlattices grown on (001) Si substrates. It is clear from the electroreflectance spectra, that structure exists which more than likely originates from the Si/Ge superlattices. In this paper, results of calculations based on empirical pseudopotentials with spin-orbit coupling are presented which demonstrate that the basic conjectures of Pearsall et al concerning the Si/Ge (4:4) superlattice are correct. New assignments are suggested for transitions which have been observed and predictions are made which can be used to test these assignments. The character of superlattice states close to the band edges are discussed in terms of their real-space charge density and their origin in wavevector space. In particular, a reversal of |mj| = 3/2 and |mj| I = 1/2 valence states with changing buffer layer composition is demonstrated in terms of the effects on subband energy levels, subband dispersions and polarisation-dependence of cross-gap transition probabilities.

Paper Details

Date Published: 18 August 1988
PDF: 10 pages
Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); doi: 10.1117/12.947314
Show Author Affiliations
M. A. Gell, British Telecommunications Research Laboratories (United Kingdom)


Published in SPIE Proceedings Vol. 0943:
Quantum Well and Superlattice Physics II
Federico Capasso; Gottfried H. Doehler; Joel N. Schulman, Editor(s)

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