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Proceedings Paper

Effects Of Electronic Coupling On The Band Alignment Of GaAs-AlAs Quantum Well Structures
Author(s): K. J. Moore; P. Dawson; C. T. Foxon
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Paper Abstract

We report the results of a systematic investigation of the effects of decreasing the AlAs layer thickness from 41Å to 5Å on the band alignment of GaAs-AlAs quantum wells in which the GaAs thickness was kept constant at nominally 25Å. Combining the techniques of photoluminescence and photoluminescence excitation spectroscopy we have mapped out both the direct r-related bandgap and the x-r bandgap as a function of AlAs thickness. We observe a reversal of the band alignment from the type II to the type I arrangement when the AlAs thickness is reduced below ~13Å In addition, we present further evidence which confirms that the type II emission process is related to the Xz-r pseudo-direct bandgap. In the structures with very thin (<10Å) AlAs layers we note a significant modification of the type I excitation spectra where the n=1 exciton peak can be hundreds of times stronger than the apparent absorption in the continuum region.

Paper Details

Date Published: 18 August 1988
PDF: 7 pages
Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); doi: 10.1117/12.947307
Show Author Affiliations
K. J. Moore, Philips Research Laboratories (England)
P. Dawson, Philips Research Laboratories (England)
C. T. Foxon, Philips Research Laboratories (England)

Published in SPIE Proceedings Vol. 0943:
Quantum Well and Superlattice Physics II
Federico Capasso; Gottfried H. Doehler; Joel N. Schulman, Editor(s)

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