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Proceedings Paper

Properties And Band Structure Of Short-Period Compensated N-I-P-I Doping Superlattices
Author(s): H. X. Jiang; H. Yan
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Paper Abstract

Dispersion and miniband structure of GaAs compensated n-i-p-i doping superlattices have been calculated by using matrix transfer method, multistep potential approach, and numerical calculations. The results are compared with energy levels calculated by use of harmonical-oscillator-type potential well. The dependence of the effective energy gaps of heavy and light holes on the period length L is also discussed.

Paper Details

Date Published: 18 August 1988
PDF: 5 pages
Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); doi: 10.1117/12.947304
Show Author Affiliations
H. X. Jiang, Michigan State University (United States)
H. Yan, Michigan State University (United States)


Published in SPIE Proceedings Vol. 0943:
Quantum Well and Superlattice Physics II
Federico Capasso; Gottfried H. Doehler; Joel N. Schulman, Editor(s)

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