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Proceedings Paper

Carrier Lifetimes In A Hetero N-I-P-I Structure.
Author(s): A. Kost; E. Garmire; A. Danner; H. C. Lee; P. D. Dapkus
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Paper Abstract

We discuss new studies of a multiple quantum well hetero n-i-p-i structure which combines the advantages of multiple quantum wells and doping superlattices. The structure exhibits large changes in its absorption coefficient for intensities of only a few mW/cm2. We have used the spectral dependence of the nonlinear absorption coefficient to deduce photogenerated carrier lifetimes as a function of intensity.

Paper Details

Date Published: 18 August 1988
PDF: 4 pages
Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); doi: 10.1117/12.947302
Show Author Affiliations
A. Kost, University of Southern California (United States)
E. Garmire, University of Southern California (United States)
A. Danner, University of Southern California (United States)
H. C. Lee, University of Southern California (United States)
P. D. Dapkus, University of Southern California (United States)


Published in SPIE Proceedings Vol. 0943:
Quantum Well and Superlattice Physics II
Federico Capasso; Gottfried H. Doehler; Joel N. Schulman, Editor(s)

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