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Proceedings Paper

Analysis Of Doping Superlattices Grown By Si MBE
Author(s): D. Landheer; M. W. Denhoff; M. Buchanan; D. C. Houghton; N. Rowell; K. H. Teo; G. H. McKinnon; J. N. McMullin
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Paper Abstract

Silicon p-n junctions and doping superlattices nipi's have been grown by molecular beam epitaxy (MBE) using an arsenic ion beam for n doping and a boric oxide source for p doping. The layers were characterised by secondary ion mass spectrometry (SIMS) and the electrical characteristics of nipi's and individual junctions were measured. The superlattices were evaporated through a silicon mask to create nini and pipi regions at the edges of mesas to which selective contacts of Au/Sb and PtSi were made to the n and p layers respectively. Our structures typically had from 10 to 20 periods with very thin or nonexistent i regions between the doped layers which were varied in the range 30 to 100 nm and doped to 5x1017-5x1018 at./cm3. The conductivity of the p layers was measured through split contacts after illumination with 632.8 nm laser pulses to determine the effective recombination lifetime. Lifetimes of 245 ms were measured at 85°K and factors limiting the achievement of longer lifetimes were investigated.

Paper Details

Date Published: 18 August 1988
PDF: 5 pages
Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); doi: 10.1117/12.947298
Show Author Affiliations
D. Landheer, National Research Council of Canada (Canada)
M. W. Denhoff, National Research Council of Canada (Canada)
M. Buchanan, National Research Council of Canada (Canada)
D. C. Houghton, National Research Council of Canada (Canada)
N. Rowell, National Research Council of Canada (Canada)
K. H. Teo, University of Alberta (Canada)
G. H. McKinnon, University of Alberta (Canada)
J. N. McMullin, University of Alberta (Canada)

Published in SPIE Proceedings Vol. 0943:
Quantum Well and Superlattice Physics II
Federico Capasso; Gottfried H. Doehler; Joel N. Schulman, Editor(s)

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