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Proceedings Paper

Deep Level Induced Formation Of Wide Minibands In A Tight-Binding Superlattice: Transition From Localized To Extended States
Author(s): Fabio Beltram; Federico Capasso
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Paper Abstract

It is shown that the introduction of deep levels in the barriers of tight-binding superlattices can have profound effects on the electronic states. By appropriate choice of the quantum well thickness and of the location of the deep center within the barrier strong mixing between the defect and superlattice states takes place. Enhancement of the miniband widths by several orders of magnitude and the creation of new Bloch states within the band-gap of the superlattice are found. Possible implementations of these new structures by Molecular Beam Epitaxy are discussed.

Paper Details

Date Published: 18 August 1988
PDF: 6 pages
Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); doi: 10.1117/12.947286
Show Author Affiliations
Fabio Beltram, AT&T Bell Laboratories (United States)
Federico Capasso, AT&T Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 0943:
Quantum Well and Superlattice Physics II
Federico Capasso; Gottfried H. Doehler; Joel N. Schulman, Editor(s)

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