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Proceedings Paper

Hole Tunneling in GaAs/Al[sub]x[/sub]Ga[sub]1-x[/sub]As Barriers and Wells
Author(s): Kenneth V. Rousseau; Joel N. Schulman; Kang L. Wang
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Paper Abstract

We have calculated the tunneling of holes in single-barrier and double-barrier GaAs/AlGaAs diodes using a ten-band, empirical tight-binding model. Transfer matrices are used to model the wave-function on a layer-by-layer level allowing for a simple, transparent imposition of an electric field, and the mixing of heavy, light and splitoff valence band states. Transmission resonances have been found, and hole currents calculated at 77 degrees K. Mixing of different hole states has been examined as a function of aluminum fraction and thickness of the barriers and well.

Paper Details

Date Published: 18 August 1988
PDF: 6 pages
Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); doi: 10.1117/12.947282
Show Author Affiliations
Kenneth V. Rousseau, University of California (United States)
Joel N. Schulman, Hughes Research Laboratories (United States)
Kang L. Wang, University of California (United States)

Published in SPIE Proceedings Vol. 0943:
Quantum Well and Superlattice Physics II
Federico Capasso; Gottfried H. Doehler; Joel N. Schulman, Editor(s)

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